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| CHA2293 24.5-29.5GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. V5 Vd Vg1 Vg Vc Typical on wafer measurements :Gain & NF Main Features * * * * * * Frequency range : 24.5-29.5GHz 3dB Noise Figure. 24dB gain Gain control range: 15dB Low DC power consumption, 160mA @ 5V Chip size : 2.32 X 1.23 X 0.10 mm 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Gain (dB) NF (dB) 24 25 26 27 28 29 30 Frequency (GHz) Main Characteristics Tamb. = 25C Parameter Min Typ Max Unit Fop G NF Gctrl Id Operating frequency range Small signal gain Noise figure Gain control range with Vc variation Bias current 24.5 24 3 15 150 29.5 GHz dB 3.5 dB dB mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22931201 -20-July-01 1/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-29.5GHz LNA VGA Electrical Characteristics for Broadband Operation Tamb = +25C, V5=Vd= 5V Symbol Fop G G Is NF Gctrl P1dB VSWRin VSWRout Vd CHA2293 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with Vc=1.2V Gain control range versus Vc Output power at 1dB compression with Vc=1.2V Input VSWR (1) Output VSWR (1) DC voltage V5= Vd Vc Min 24.5 Typ Max 29.5 Unit GHz dB dB dB 24 1.5 50 3 15 12 4.0:1 2.0:1 5 [-0.7, 1.2] 35 160 3.5 dB dB dBm -1.5 1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias current total (3) with Vc=1.2V (1) These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1 voltage. (3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Vc Id Vg Pin Ta Tstg Drain bias voltage Control bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Parameter Values 5.5 1.5 250 -2.0 to +0.4 +15 -40 to +85 -55 to +155 Unit V V mA V dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22931201 -20-July-01 2/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-29.5GHz LNA VGA Typical on wafer Measurements Bias Conditions : 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 CHA2293 V5=Vd= 5 Volt, Vg1 pour Id1= 35mA, Vg = -0.3V, Vc=1.2V Gain (dB) NF (dB) 24 25 26 27 28 29 30 Frequency (GHz) Gain & Noise Figure versus frequency Bias Conditions : 30 V5=Vd= 5 Volt, Vg1 =Vg = -0.3V 25 Vc=1.2V 20 (dB) 15 Vc=-0.5V 10 5 0 24 25 26 27 28 29 30 Frequency (GHz) Control gain range versus frequency Ref. : DSCHA22931201 -20-July-01 3/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-29.5GHz LNA VGA 30 CHA2293 24GHz 26 26GHz 28GHz 29GHz 22 30GHz (dB) 18 14 10 -1 -0.5 0 0.5 1 1.5 Control voltage Vc (V) Gain versus control voltage In jig Measurements Bias Conditions : V5=Vd= 5 Volt, Vg1= Vg = -0.3V, Vc= 1.2V All these measurement include the losses from the jig ( about 0.5dB on gain, 0.2dB on noise figure and 0.3dB on output power). 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 Gain (dB) Pout (dBm) -30 -25 -20 Input power (dBm) -15 -10 Gain & Output power @ 24-26 GHz Ref. : DSCHA22931201 -20-July-01 4/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 24.5-29.5GHz LNA VGA 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 CHA2293 Gain (dB) Pout (dBm) -30 -25 -20 Input power (dBm) -15 -10 Gain & Output power @ 28-30 GHz 20 18 16 14 30 26 G a i n 22 18 14 10 6 2 -2 -6 -10 Noise Figure (dB) 12 10 8 6 4 2 0 23 Vc= +0.8V Vc= 0V Vc= -0.4V NF 25 27 29 31 Frequency ( GHz) Gain & Noise Figure versus Vc Ref. : DSCHA22931201 -20-July-01 5/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain (dB) Vc= +1.2V 24.5-29.5GHz LNA VGA Chip Assembly and Mechanical Data CHA2293 Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bond Pad:100 x 100 m Bonding pad positions ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA22931201 -20-July-01 6/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2293 Ordering Information Chip form : CHA2293-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22931201 -20-July-01 7/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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